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AMI Semiconductor, Inc.
ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770
N04Q1618C2B
Advance Information
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction
256Kx16 bit POWER SAVER TECHNOLOGY Overview
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor's advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability. The device can operate over a very wide temperature range of 0oC to +70oC for the lowest power and is also available in the industrial range of -40oC to +85oC. The devices are available in standard BGA and TSOP packages. The devices are also available as Known Good Die (KGD) for embedded package applications.
Features
* Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V * Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ * Very low standby current 50nA typical for 1.2V operation * Very low operating current 400A typical for 1.2V operation at 1s * Very low Page Mode operating current 80A typical for 1.2V operation at 1s * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion * Automatic power down to standby mode * BGA, TSOP and KGD options * RoHS Compliant
Product Options
Part Number N04Q1612C2Bx-15C1 N04Q1618C2Bx-15C1 N04Q1618C2Bx-70C N04Q1618C2BX-85C Typical Standby Current 50nA 50nA 200nA 200nA 1.8 1.8, 3.0 Vcc (V) 1.2 VccQ (V) 1.2, 1.8, 3.0 Speed (nS) 150ns 150ns 70ns 85ns Typical Operating Operating Current Temperature 0.4 mA @ 1MHz 0.4 mA @ 1MHz 0.6 mA @ 1MHz 0.6 mA @ 1MHz 0oC to +70oC
1. Part numbers are under development. Please contact your local sales representative for details.
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
1
N04Q1618C2B
AMI Semiconductor, Inc. Pin Configurations (4Mb) Advance Information
A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
PIN ONE
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCCQ I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17
1 A B C D E F G H
LB I/O8 I/O9 VSS
2
OE UB I/O10 I/O11
3
A0 A3 A5 A17 NC A14 A12 A9
4
A1 A4 A6 A7 A16 A15 A13 A10
5
A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11
6
CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC
VCCQ I/O12 I/O14 I/O13 I/O15 NC NC A8
48 Pin BGA (top)
TSOP II
Pin Descriptions
Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Power for I/O Core Ground Not Connected
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
2
N04Q1618C2B
AMI Semiconductor, Inc. Functional Block Diagram Address Inputs
(A1 - A4)
Advance Information
Word Address Decode Logic
Address Inputs
(A0, A5 - A17)
Page Address Decode Logic
4Mb RAM Array
Input/ Output I/O0 - I/O7 Mux and Buffers I/O8 - I/O15
Word Mux
CE1 CE2 WE OE UB LB
Control Logic
Functional Description
CE1 H X L L L L CE2 X L H H H H WE X X X L H H OE X X X X3 L H UB1 X X H L1 L1 L1 LB1 X X H L1 L
1
I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z
MODE Standby2 Standby2 Standby Write3 Read Active
POWER Standby Standby Standby Active Active Active
L1
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
3
N04Q1618C2B
AMI Semiconductor, Inc. Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating -0.3 to VCC+0.3 -0.3 to 4 500 -40 to 125 -40 to +85 260 C, 10sec
o
Advance Information
Unit V V mW
o o o
C C C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range, 0o - 70o C)
Item Core Supply Voltage I/O Supply Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Symbol VCC VCCQ VIH VIL VOH VOL ILI ILO IOH = -100uA IOL = 100uA VIN = 0 to VCC OE = VIH or Chip Disabled Device N04Q1612... N04Q1618... N04Q1612... N04Q1618... Conditions 1.2V Core Device 1.8V Core Device 1.2V Core Device 1.8V Core Device Min. 1.1 1.65 1.1 1.65 0.8 x VCCQ -0.3 VCC-0.2 0.2 0.5 0.5 Typ 1.2 1.8 Max 1.3 1.95 3.3 3.3 VCC+0.3 0.2 x VCCQ V V A A Unit V V V
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
4
N04Q1618C2B
AMI Semiconductor, Inc. Power Consumption (TA = 0oC - 70oC)
Device PN Standby Current2 N04Q1612C2Bx15C Read/Write Current3 Page Mode Current Isb Icc Iccp
Chip Disabled VCC = 1.3V, VIN = VCC or 0 Chip Enabled, IOUT = 0 VCC=1.3V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=1.3V, VIN=VIH or VIL Chip Disabled VCC = 1.9V, VIN = VCC or 0V Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Disabled VCC = 1.9V, VIN = VCC or 0 Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL
Advance Information
Speed
Typ1 50
Max 500 0.5 3 100 450 nA mA A
1us 150ns 1us 150ns
0.4 2 80 300
Standby Current N04Q1618C2Bx15C Read/Write Current Page Mode Current
Isb Icc Iccp
50 1us 150ns 1us 150ns 0.4 2 80 400
500 0.5 3 100 500
nA mA A
Standby Current Read/Write Current
Isb Icc
0.2 1us 70ns 85ns 1us 70ns 85ns 0.6 6 0.1 0.8
1.5 0.9 7 0.2 1
A mA
N04Q1618C2Bx70C/85C
Page Mode Current
Iccp
mA
1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values. 3. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. This applies to all Icc and Iccp values.
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
5
N04Q1618C2B
AMI Semiconductor, Inc. Power Savings with Page Mode Operation (WE = VIH) Advance Information
Page Address
(A0, A5-A17)
Open page ...
Word Address
(A1-A4)
Word 1
Word 2
Word 16
CE1 CE2
OE LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A1 - A4 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs.
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
6
N04Q1618C2B
AMI Semiconductor, Inc. Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature 0.1VCC to 0.9 VCC 5ns 0.5 VCC CL = 30pF 0 to +70oC
Advance Information
Timing
Item Read Cycle Time Address Access Time Page Mode Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Byte Select to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Byte Select to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Byte Select Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Byte Select to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tAAP tCO tOE tBE tLZ tOLZ tBZ tHZ tOHZ tBHZ tOH tWC tCW tAW tBW, tWP tAS tWR tWHZ tDW tDH tOW 40 0 5 10 5 10 0 0 0 10 70 50 50 50 40 0 0 20 50 0 5 20 20 20 -70 Min. 70 70 70 70 35 70 10 5 10 0 0 0 10 85 60 60 60 50 0 0 20 100 0 5 20 20 20 Max. Min. 85 85 85 85 45 85 10 5 10 0 0 0 10 150 120 120 120 100 0 0 20 20 20 20 -85 Max. Min. 150 150 150 150 75 150 -150 Max. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
7
N04Q1618C2B
AMI Semiconductor, Inc. Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC Address tAA tOH
Advance Information
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC Address
tAA
tHZ
CE1 tCO CE2 tLZ tOE OE tOLZ LB, UB tBLZ Data Out High-Z tBHZ Data Valid tBE tOHZ
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
8
N04Q1618C2B
AMI Semiconductor, Inc. Timing Waveform of Page Mode Read Cycle (WE = VIH)
tRC Page Address tAA Word Address tHZ CE1 tCO CE2 tOHZ tAAP
Advance Information
tOE OE tOLZ LB, UB tBLZ High-Z tBE
tBHZ
Data Out
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
9
N04Q1618C2B
AMI Semiconductor, Inc. Timing Waveform of Write Cycle (WE control)
tWC Address tAW CE1 tCW CE2 tBW LB, UB tAS WE tDW High-Z Data In tWHZ Data Out High-Z tDH tWP tWR
Advance Information
Data Valid tOW
Timing Waveform of Write Cycle (CE1 Control)
tWC Address tAW CE1 (for CE2 Control, use inverted signal) LB, UB tWP WE tDW Data In tLZ Data Out tWHZ tDH tCW tAS tBW tWR
Data Valid
High-Z
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
10
N04Q1618C2B
AMI Semiconductor, Inc. 44-Lead TSOP II Package (T44) Advance Information
18.410.13
10.160.13
11.760.20
0.80mm REF
0.45 0.30
SEE DETAIL B
DETAIL B
1.100.15
0o-8o 0.20 0.00 0.80mm REF
Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
11
N04Q1618C2B
AMI Semiconductor, Inc. Ball Grid Array Package
A1 BALL PAD CORNER (3) D 0.280.05 1.240.10 1. 0.350.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e Z
Advance Information
SD
e SE
BOTTOM VIEW
Dimensions (mm)
e = 0.75 D 60.10 E SD 80.10 0.375 SE 0.375 J 1.125 K 1.375 BALL MATRIX TYPE FULL
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
12
N04Q1618C2B
AMI Semiconductor, Inc. Ordering Information Advance Information
N04Q16 XX C2B X - XX X
Temperature C = 0oC - 70oC
Performance
70 = 70ns 85 = 85ns 15 = 150ns (under development) T2 = 44-pin TSOP II Green (RoHS Compliant) B2 = 48-ball BGA Green (RoHS Compliant) W = Wafer (KGD)
Package Type
Operating Voltage
12 = 1.2V (under development) 18 = 1.8V
Q = Low Power SRAM with VccQ for dual rail operation
Revision History
Revision A B C D Date October 2005 February 2006 July 2006 September 2006 Change Description Initial Advanced Release Raised maximum Vcc to 3.6V for 3V device Added green packages Changed dual rail to `Q' part designator Seperated 1,8V dual rail and 3V single rail Updated VccQ for TSOP Converted to AMI Semiconductor
(c) 2006 AMI Semiconductor, Inc. All rights reserved. AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. AMIS does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. AMIS makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does AMIS assume any liability arising out of the application or use of any product or circuit described herein. AMIS does not authorize use of its products as critical components in any application in which the failure of the AMIS product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.
13

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